Accession Number : AD0685172

Title :   GROWTH, PROCESSING AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : Bartlett,Robert W. ; Mueller,Robert A.

Report Date : FEB 1969

Pagination or Media Count : 26

Abstract : Epitaxial vapor deposition of beta-silicon carbide was continued with diborane, aluminum trichloride, and nitrogen doping. Methods for selectively removing unwanted silicon carbide from the deposited crystals are still being sought, and work is continuing to improve thin film electrocal contacts. Grinding or lapping across junctions causes poor diode performance because of surface damage and current leakage. Results on limited vapor-liquid-solid crystal growth experiments are reported. Superior electroluminescent behavior of diodes does not correlate directly with superior photoluminescent behavior. (Author)

Descriptors :   (*SILICON CARBIDES, *EPITAXIAL GROWTH), (*ELECTROLUMINESCENCE, SILICON CARBIDES), DIBORANES, ALUMINUM COMPOUNDS, DOPING

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE