Accession Number : AD0685518

Title :   ACADEMY OF SCIENCES OF THE UKRAINIAN SSR. PHYSICO-TECHNOLOGICAL INSTITUTE. PHYSICAL PROPERTIES OF ESPECIALLY PURE METALS AND SEMICONDUCTORS (SELECTED ARTICLES),

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Saidov,M. S. ; Shamuratov,Kh. A. ; Shukurov,I.

Report Date : 30 JUL 1968

Pagination or Media Count : 15

Abstract : Contents: Growing of single crystals of silicon carbide of cubic modification; Influence of annealing of silicon in antimony vapor on the density of linear dislocations.

Descriptors :   (*SILICON CARBIDES, CRYSTAL GROWTH), (*SILICON, DISLOCATIONS), SINGLE CRYSTALS, ELECTRICAL PROPERTIES, SEMICONDUCTOR DIODES, ANNEALING, IMPURITIES, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE