Accession Number : AD0686091

Title :   INTERNAL QUANTUM EFFICIENCY OF GaAs1-xPx ELECTROLUMINESCENT DIODES.

Descriptive Note : Scientific Interim rept. no. 1, 1 Dec 67-30 Nov 68,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Tietjen,James J. ; Nuese,Charles J. ; von Philipsborn,Henning

Report Date : 30 NOV 1968

Pagination or Media Count : 32

Abstract : The objective of this contract has been to study and to optimize the internal quantum efficiency of GaAs1-xPx electroluminescent diodes, particularly those emitting visible radiation. This investigation has involved the effects of alloy composition, impurity types and concentrations, compositional grading, junction abruptness, and crystal growth conditions. Average junction efficiencies have been increased by an order of magnitude by optimizing the various parameters. As a result, planar diodes, emitting at 6800A, can be prepared with room-temperature external efficiencies of about 0.1%. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, ELECTROLUMINESCENCE), (*LASERS, GALLIUM ARSENIDES), GALLIUM COMPOUNDS, PHOSPHIDES, EFFICIENCY, DOPING, CRYSTAL GROWTH, VAPOR PLATING, SOLID SOLUTIONS

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE