Accession Number : AD0686237

Title :   THE EFFECT OF SiO2 ON THE GROWTH OF SILICON CARBIDE ON SILICON,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kalanch,Ya. V. ; Feltyn,I. A. ; Freiberga,L. F.

Report Date : 19 DEC 1968

Pagination or Media Count : 7

Abstract : Single crystal films of SiC were grown on Si from methyldichloro silicon in an Ar or H atm. at 1100 degrees and investigated by electron diffraction. The presence of SiO2 on the Si surface results in an amorphour film structure. The current voltage characteristic of the heterotransition Si to amorphous SiC reveals no effect of the SiO2 film. This is ascribed to easy tunneling through the SiO2 film.

Descriptors :   (*SILICON CARBIDES, EPITAXIAL GROWTH), (*EPITAXIAL GROWTH, SURFACE PROPERTIES), SEMICONDUCTING FILMS, SILICON DIOXIDE, ELECTRON DIFFRACTION, TUNNELING(ELECTRONICS), CONTROLLED ATMOSPHERES, SINGLE CRYSTALS, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE