Accession Number : AD0686256
Title : EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON,
Corporate Author : BRITISH COLUMBIA UNIV VANCOUVER DEPT OF PHYSICS
Personal Author(s) : White,J. J.
Report Date : 13 APR 1967
Pagination or Media Count : 24
Abstract : Effects of various electrical perturbations on the boron acceptor states in silicon were studied using low-temperature absorption-line measurements. The theories of ionized impurity broadening are discussed briefly and the observed properties of a new absorption line due to compensation are reported.
Descriptors : (*SILICON, BAND THEORY OF SOLIDS), (*BAND THEORY OF SOLIDS, ABSORPTION SPECTRA), STARK EFFECT, INFRARED RADIATION, ELECTRIC FIELDS, EXCITATION, CRYOGENICS, DOPING, BORON, PERTURBATION THEORY, CANADA
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE