Accession Number : AD0687644

Title :   ILLUMINATION AND THE PHOTOENGRAVING OF SILICON,

Corporate Author : LOCKHEED MISSILES AND SPACE CO PALO ALTO CALIF LOCKHEED RESEARCH LAB

Personal Author(s) : Wales,R. D.

Report Date : 04 DEC 1968

Pagination or Media Count : 6

Abstract : Equations have been derived for the rate and depth of engraving of near-intrinsic and low-resistivity n-type semiconductor materials. Semiempirical relationships for n-type silicon have been developed from the derived equations. The low-resistivity material, probably due to the defect structure, etched in triangular pits. The high-resistivity material gave very good engravings with a resolution of better than 12 micrometers. The good quality of the pattern and lens is critical in obtaining fine engravings, and the quality and degree of monochromaticity of the illumination affect the resolution and quality of the engraving. (Author)

Descriptors :   (*SEMICONDUCTORS, ETCHING), (*SILICON, PHOTOENGRAVING), ILLUMINATION, ELECTROLYTES, CRYSTAL DEFECTS, ELECTROCHEMISTRY, RESOLUTION

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE