Accession Number : AD0688838

Title :   TUNNELING MEASUREMENT OF ELECTRON-PLASMON INTERACTIONS IN DEGENERATE SEMICONDUCTORS,

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Duke,C. B. ; Rice,M. J. ; Steinrisser,F.

Report Date : JUN 1969

Pagination or Media Count : 45

Abstract : The electronic proper self energy due to electron-plasmon interactions in degenerate semiconductors was evaluated using the Random Phase Approximation. This self energy together with elementary models of the barrier penetration factor is used to calculate the tunneling characteristics of rectifying metal contacts on the degenerate semiconductors. (Author)

Descriptors :   (*SEMICONDUCTORS, *TUNNELING(ELECTRONICS)), ELECTRONS, OSCILLATION, PLASMAS(PHYSICS), INTERACTIONS, GALLIUM ARSENIDES, DOPING

Subject Categories : Nuclear Physics & Elementary Particle Physics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE