Accession Number : AD0689187

Title :   CHANNELING IN SEMICONDUCTORS AND ITS APPLICATION TO THE STUDY OF ION IMPLANTATION,

Corporate Author : CALIFORNIA INST OF TECH PASADENA CALIF DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Picraux,Samuel Thomas

Report Date : APR 1969

Pagination or Media Count : 123

Abstract : The channeling characteristics of protons and helium ions in various diamond-type lattices (diamond, Si, Ge, GaP, GaAs, GaSb) have been studied by means of elastic backscattering in the 0.5 to 2 MeV range. Critical angles and minimum yields have been measured and compared to theory. Channeling and electrical measurements are combined to study ion implanted impurities in silicon. The anneal behavior of Cd and Te implantations (20-50 keV) into Si at substrate temperatures of 23 degrees C and 350 degrees C were investigated. (Author)

Descriptors :   (*SEMICONDUCTORS, ION BOMBARDMENT), (*CRYSTAL DEFECTS, DETECTION), PROTON BOMBARDMENT, ALPHA BOMBARDMENT, DIAMONDS, GALLIUM ARSENIDES, GERMANIUM, SILICON, PHOSPHIDES, GALLIUM COMPOUNDS, BACKSCATTERING, IMPURITIES, THESES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE