Accession Number : AD0689559
Title : EPITAXIAL GROWTH MECHANISMS IN VACUUM DEPOSITED THIN FILMS.
Descriptive Note : Final rept. 1 Aug 62-31 Jul 68,
Corporate Author : GEORGIA INST OF TECH ATLANTA ENGINEERING EXPERIMENT STATION
Personal Author(s) : Gerdes,R. J. ; Young,R. A.
Report Date : 30 MAY 1969
Pagination or Media Count : 14
Abstract : The mechanisms which lead to oriented overgrowth have been investigated with a view towards experimental and theoretical development of suitable models for nucleation and growth phenomena. Particular emphasis was placed on the role of common epitaxial features occurring independently of experimental conditions. Such features included the parallel alignment of close-packed rows of deposit atoms with <110> directions in the substrate, long-range epitaxial effects and crystallite size distributions characteristic of the various growth stages. (Author)
Descriptors : (*METAL FILMS, *EPITAXIAL GROWTH), VAPOR PLATING, VACUUM APPARATUS, NUCLEATION, SUBSTRATES, TWINNING(CRYSTALLOGRAPHY), ELECTRON DIFFRACTION, ELECTRON MICROSCOPY, STRAIN(MECHANICS), X RAY DIFFRACTION, SILVER, GOLD, COPPER
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE