Accession Number : AD0690861

Title :   EFFECTS OF STRESS ON THE ELECTRICAL CHARACTERISTICS OF TUNNEL DIODES.

Descriptive Note : Final rept.,

Corporate Author : OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS

Personal Author(s) : Lee,H. S. ; Boone,E. M.

Report Date : SEP 1964

Pagination or Media Count : 205

Abstract : The effects of uniaxial compression and of hydrostatic pressure on the indirect tunneling process in germanium and silicon tunnel junctions under forward bias at room temperature were studied. (Author)

Descriptors :   (*TUNNEL DIODES, ELECTRICAL PROPERTIES), STRESSES, GERMANIUM, SILICON, TUNNELING(ELECTRONICS), HYDROSTATIC PRESSURE, BAND THEORY OF SOLIDS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE