Accession Number : AD0691024

Title :   SCHOTTKY BARRIERS ON GaAs,

Corporate Author : AEROSPACE CORP EL SEGUNDO CALIF LAB OPERATIONS

Personal Author(s) : Millea,Michael F. ; McColl,Malcolm ; Mead,C. A.

Report Date : 15 APR 1969

Pagination or Media Count : 40

Abstract : The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron concentration in the range of 8 x 10 to the 17th power to 8 x 10 to the 18th power/cc at temperatures from 297 to 4.2K. Both vacuum cleaved and chemically polished surfaces are used. The majority of the junctions studied are gold Schottky barriers, but tin and lead contacts are also examined. The predominant current mechanism is field emission at liquid nitrogen temperature and below for the range of electron concentrations used. These data are in excellent quantitative agreement at 77K with the field emission analysis of Padovani and Stratton of one uses a two-band model for the imaginary wave vector kn. At 297K, thermionic field emission predominates, but for an electron density above 3 x 10 to the 18th power/cc the field emission mechanism with a two-band model still gives reasonable agreement. (Author)

Descriptors :   (*GALLIUM ARSENIDES, ELECTRIC TERMINALS), (*BAND THEORY OF SOLIDS, WORK FUNCTIONS), TUNNELING(ELECTRONICS), FIELD EMISSION, THERMIONIC EMISSION, HALL EFFECT, ELECTRON DENSITY, INTERFACES, CRYOGENICS, GOLD, LEAD(METAL), TIN

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE