Accession Number : AD0693154

Title :   SELECTIVE DOPING OF PIEZOELECTRIC CRYSTALS BY ION IMPLANTATION.

Descriptive Note : Semiannual rept. 1 Jan-30 Jun 69,

Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s) : Shifrin,G. A. ; Zanio,K. R. ; Jamba,D. M. ; Jones,W. R. ; Marsh,O. J.

Report Date : AUG 1969

Pagination or Media Count : 54

Abstract : The feasibility of creating n-type conducting regions in piezoelectric crystals by ion implantation is being investigated. Experimental studies have been performed with crystals of CdS and ZnO, and dopant ions of H, B, F, A1, C1, and Ga. To date, both ZnO and CdS have been doped by ion implantation. The best success has been achieved with hydrogen in ZnO implanted at room temperature, in which an n-type conduction 1000 times stronger than the unimplanted portion was attained. Implantations of B, A1, Ga, F, and C1 in CdS have produced varying lesser degrees n-type conductivity, with A1 the best. Range-energy calculations have been performed for the ion-substrate combinations of interest. A theoretical investigation of a piezoelectric surface wave propagation in the presence of an ion-implanted layer in a piezoelectric crystal substrate with the objective of application to amplification has resulted in a computer program which will be run in the second period of the program. (Author)

Descriptors :   (*PIEZOELECTRIC CRYSTALS, ION BOMBARDMENT), (*SEMICONDUCTORS, DOPING), ELECTRICAL CONDUCTIVITY, ULTRASONIC RADIATION, HALL EFFECT, CADMIUM SULFIDES, ZINC COMPOUNDS, OXIDES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE