Accession Number : AD0693281

Title :   EFFECT OF LASER RADIATION ON SEMICONDUCTORS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Gitlevich,A. E. ; Goloshchapov,Yu. V. ; Gorynin,V. N. ; Lange,T. I. ; Maksimov,Yu. I.

Report Date : 04 JUN 1969

Pagination or Media Count : 9

Abstract : It has been established that intensive laser irradiation of materials causes the formation of surface craters, cracks and dislocations. This study is concerned with the effect of laser irradiation on semiconductors. Single crystals of Ge, Si, GaAs, GaP, InAs, and InSb were irradiated under an SU-1 ruby laser with light pulses of 5 Mu sec duration and 0.6 joule maximum energy. Microscopic studies of the irradiated specimens revealed that the laser beam caused formation of craters with smooth outlines, whose size and depth varied depending on the material. The largest diameter of 0.15 mm and depth of 50-60 Mu were found on the surface of InSb specimens. According to the size of their craters, the crystals can be arranged in descending order as follows: InSb, InAs, Ge, Si, and GaP, which is consonant with the melting points of the above materials. (Author)

Descriptors :   (*SEMICONDUCTORS, *PHOTON BOMBARDMENT), (*LASERS, SEMICONDUCTORS), SURFACE PROPERTIES, DEFECTS(MATERIALS), CRACKS, DISLOCATIONS, GERMANIUM, SILICON, GALLIUM ARSENIDES, PHOSPHIDES, GALLIUM COMPOUNDS, INDIUM COMPOUNDS, ARSENIDES, ANTIMONY ALLOYS, USSR

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE