Accession Number : AD0694844

Title :   STRAIN SENSITIVITY IN INDIUM ANTIMONIDE FILMS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Sirota,N. N. ; Bolvanovich,E. I.

Report Date : 30 JAN 1969

Pagination or Media Count : 9

Abstract : The stress effect was measured and the effects of electron concentration and film thickness on stress-sensitivity were studied in InSb thin films deposited by flash evaporation of commercial InSb powder on a heated glass substrate. Concentration of electrons varied by autodoping within 5 x 10 to the 16th power to 3 x 10 to the 18th power electrons/cc. Electrical characteristics of the films of varied thickness (0.3-1.9 micrometers) were measured and the data were tabulated. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, *TRANSDUCERS), (*INDIUM ANTIMONIDES, STRAIN(MECHANICS)), SEMICONDUCTING FILMS, HALL EFFECT, STRESSES, USSR

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE