Accession Number : AD0696258

Title :   INTERFACE AND BULK PHENOMENA IN SOLID STATE SCIENCE.

Descriptive Note : Final scientific rept. 15 Sep 66-14 Sep 69,

Corporate Author : ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Sah,C. T.

Report Date : 14 OCT 1969

Pagination or Media Count : 11

Abstract : The electrical properties of surface states at the interface of silicon diodes and silicon have been studied using the small signal admittance measurements on metal-oxide-silicon capacitor structures over wide ranges of signal frequency, temperature, oxide thickness and oxidation conditions. Ellipsometry techniques are set up for the thin oxide region. Detailed studies have been made to correlate the 1/f noise power spectra with interface state density and carrier cross-sections. Orientation and size effects of carrier scattering at the interface have been observed from 4 to 300 degrees K and correlated with the quantum and classical models, including mobility anisotropy. A two dimensional analysis of the saturation electrical characteristics of surface channel and surface field-effect transistor structures has been verified by experiments. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, NOISE(RADIO)), (*SILICON, SURFACE PROPERTIES), BAND THEORY OF SOLIDS, SEMICONDUCTOR DIODES, CARRIERS(SEMICONDUCTORS), SILICON COMPOUNDS, OXIDES, ADMITTANCE, MOBILITY, CRYOGENICS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE