Accession Number : AD0696294

Title :   PRODUCTION OF NONEQUILIBRIUM PLASMAS IN INDIUM ANTIMONIDE,

Corporate Author : BOEING SCIENTIFIC RESEARCH LABS SEATTLE WASH PLASMA PHYSICS LAB

Personal Author(s) : Ancker-Johnson,Betsy

Report Date : SEP 1969

Pagination or Media Count : 40

Abstract : Electrons and holes in excess of their thermal equilibrium density are generally produced in a semiconductor by one (or more) of these three means: (1) electrical injection, (2) optical injection, or (3) impact ionization. If the excess carrier density so produced is large compared with the recombination center density, a 2-component, electron-hole plasma results which is analogous to an electron-ion plasma. The work described here is motivated by the desire to obtain a fundamental understanding of electron-hole plasmas in their transient state and nonequilibrium steady-state. (Author)

Descriptors :   (*INDIUM ANTIMONIDES, PLASMA MEDIUM), (*SEMICONDUCTORS, PLASMA MEDIUM), CARRIERS(SEMICONDUCTORS), TRANSIENTS, IONIZATION, INJECTION

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE