Accession Number : AD0696303

Title :   THERMOPHYSICAL PROPERTIES OF ALLOYS IN THE SYSTEMS BORON-NITROGEN, BORON-CARBON, SILICON-NITROGEN, AND BORON-SILICON-CARBON,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Samsonov,G. V.

Report Date : 14 FEB 1969

Pagination or Media Count : 19

Abstract : The paper deals with an investigation of the properties of a number of high-temperature semiconducting alloys manufactured by powder metal methods. It is shown that the compound BN in the boron-nitrogen system possesses an extensive region of homogeneity; the rearrangement of the boron lattice during nitrogenization leads to the formation of alloys in the nitride homogeneity region with predominance of electronic conductivity. With an increase in the nitrogen content in the nitride the electrical resistance of the latter sharply rises up to 35-38 percent of nitrogen, after which the rise in resistance is decelerated, which is accounted for by the participation in the conductivity of electrons effecting the bonds between the plane layers of atoms in the nitride structure. It is established that Si3N4 is a semiconductor. The nature of the effect of additions of carbon and titanium on silicon nitride conductivity is shown. The author shows the existence of two carbides - B4C and B12C - in the boron-carbon system. (Author)

Descriptors :   (*NITRIDES, ELECTRICAL PROPERTIES), (*BORIDES, ELECTRICAL PROPERTIES), (*CARBIDES, ELECTRICAL PROPERTIES), (*SILICIDES, ELECTRICAL PROPERTIES), SEMICONDUCTORS, CRYSTAL STRUCTURE, PHASE STUDIES, SILICON ALLOYS, CARBON ALLOYS, BORON ALLOYS, ELECTRICAL RESISTANCE, USSR

Subject Categories : Physical Chemistry
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE