Accession Number : AD0696316

Title :   EFFECT OF GAMMA RADIATION ON THE MICROHARDNESS OF Ge AND Si SINGLE CRYSTALS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kaipnazarov,D. K. ; Domoryad,I. A.

Report Date : 05 SEP 1969

Pagination or Media Count : 7

Abstract : The dependence of the microhardness of materials on such factors as the extent of perfection of crystal lattices, degree of purity of the samples, and the condition of the surface is studied. Results on the effects of gamma-irradiation on the microhardness of single crystals of Ge and Si are reported. It is shown that the magnitude of hardness obeys a given formula. Curves are plotted of: (1) relative fluctuation of microhardness versus the gamma-ray dosage; (2) isothermic annealing of defects generated by gamma-ray irradiation for various temperatures, and (3) variation of the logarithm of the annealing time for a definite fraction of defects versus the temperature. (Author)

Descriptors :   (*SINGLE CRYSTALS, CRYSTAL DEFECTS), (*DAMAGE, GAMMA RAYS), (*GERMANIUM, HARDNESS), (*SILICON, HARDNESS), SEMICONDUCTORS, ANNEALING, USSR, (U)USSR

Subject Categories : Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE