Accession Number : AD0696665
Title : ELECTRICAL TRANSPORT PROPERTIES OF THIN BISMUTH FILMS.
Descriptive Note : Interim technical rept.,
Corporate Author : PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF PHYSICS
Personal Author(s) : Hoffman,Richard A.
Report Date : OCT 1969
Pagination or Media Count : 159
Abstract : Bismuth films with a well-ordered but twinned crystal structure were grown by slow vacuum deposition (100 A/min) onto heated mica substrates (160C) in ultra-high vacuum 5 x 10 to the - 9th power) followed by annealing at 160 C for 1/2 hour. The resistivity and Hall coefficient of these films with thicknesses between 700 and 37,000 A were measured between 1.15 and 300 K while the magnetoresistance coefficient was measured at 1.15, 4.2, 77 and 300 K. It was found that the surface scattering of the charge carriers in these films is not specular, contrary to the findings of other workers. Quantum size effect oscillations were observed in all the transport properties of the thinnest films at low temperatures.
Descriptors : (*METALLOIDS, *BAND THEORY OF SOLIDS), (*BISMUTH, ELECTRICAL PROPERTIES), ELECTRICAL RESISTANCE, HALL EFFECT, TWINNING(CRYSTALLOGRAPHY), VAPOR PLATING, VACUUM APPARATUS, METAL FILMS, THERMAL STRESSES, SURFACE PROPERTIES, CRYOGENICS, THESES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE