Accession Number : AD0696680

Title :   A RADIATION EFFECTS RESEARCH PROGRAM UNDER THE PROJECT THEMIS.

Descriptive Note : Annual rept. 1 Mar 69-31 Aug 69,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s) : Grannemann,W. W. ; Allen,R. C. , Jr. ; Boatwright,L. T. ; Byatt,W. J. ; Southward,H. D.

Report Date : SEP 1969

Pagination or Media Count : 205

Abstract : Radiation effects research has been directed toward basic problems with dielectric materials, semiconductor materials, and solid-state devices, such as: Electron transport in a one-dimensional solid, Small-signal s-parameters for high-frequency transistors, Light-emitting diodes, laser diodes, and the gallium-arsenide material used in the construction of the diodes, Technology for making micro-Hall devices, Metal-oxide-silicon capacitors with guard rings, Dielectric Hall effect devices of microcircuit size, Avalanche theory, Four-layer silicon-controlled rectifiers, Schottky barrier diodes fabricated on silicon and gallium phosphide, and Fabrication of small radiation-resistant devices. (Author)

Descriptors :   (*SEMICONDUCTOR DEVICES, *DAMAGE), RELIABILITY(ELECTRONICS), CRYSTAL STRUCTURE, ELECTRONS, TRANSPORT PROPERTIES, COMPUTER PROGRAMMING, TRANSISTORS, DIODES, GALLIUM, ARSENIDES, CAPACITORS, DEGASIFICATION, VOLTAGE, DIELECTRIC PROPERTIES, SILICON CONTROLLED RECTIFIERS, ELECTRICAL PROPERTIES, (U)ELECTRICAL PROPERTIES

Subject Categories : Electrooptical and Optoelectronic Devices
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE