Accession Number : AD0696681

Title :   LOW TEMPERATURE STUDIES OF RADIATION DAMAGE IN SEMICONDUCTORS.

Descriptive Note : Final scientific rept. 1 Aug 66-31 Oct 68,

Corporate Author : ECOLE NORMALE SUPERIEURE PARIS (FRANCE) LABORATOIRE DE PHYSIQUE

Personal Author(s) : Baruch,P. ; Bourgoin,J. ; Brelot,A. ; Cherki,M. ; Fischer,J.

Report Date : 30 JUN 1969

Pagination or Media Count : 58

Abstract : A detailed study of annealing states of n-type Germanium irradiated by electrons at low temperatures was performed through the use of stored energy measurements, photoconductivity, fast pulse annealing and conventional resistivity measurements. The effect of illumination on the annealing rate has been observed. It was found, mainly, that the 65K annealing stage kinetics suggest a rate limited process. No direct influence of the chemical nature of dopant impurities has been found. Illumination shifts this stage down to 20K, indicating that, through an electronic process, one element of the defect pair is mobile. Photoconductivity, effect of uniaxial stress and stored energy measurements was performed on Boron and Aluminum doped Silicon, irradiated between 4K and 300K by 1 to 3 MeV electrons. A level at 0.395 (Aluminum) or 0.430 (Boron) is introduced at room temperature as well as at 4.2K, and anneals around 300C. It is suggested that the defect is a boron interstitial with a trigonal symmetry. (Author)

Descriptors :   (*GERMANIUM, DAMAGE), (*SILICON, DAMAGE), (*SEMICONDUCTOR, *DAMAGE), CRYOGENICS, ANNEALING, IMPURITIES, DOPING, PHOTOCONDUCTIVITY, CRYSTAL DEFECTS, BORON, ALUMINUM, FRANCE, (U)FRANCE

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE