Accession Number : AD0697147

Title :   INTERFACE PHENOMENA INTEGRATING CIRCUIT OXIDES.

Descriptive Note : Annual rept. 4 Mar 68-3 Mar 69,

Corporate Author : CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s) : Viswanathan,Cadambanguri R.

Report Date : OCT 1969

Pagination or Media Count : 46

Abstract : The instability in MIS devices, arising due to mobile positive ions in the insulator layer is investigated using photoelectric layer. A direct measurement of the built-in voltage in the MIS structure, viz., the voltage existing across the insulator due to interface effects, has been shown to be possible using the photoelectric technique. It was found that the built-in voltage differs by 0.85 volts between the degenerate n and p type samples under identical conditions. The built-in voltage is also a function of the spatial distribution of positive ions in the insulator layer. Using the values of the built-in voltage, interface photoelectric technique. It was found that the built-in voltage differs by 0.85 volts between the degenerate n and p type samples under identical conditions. The built-in voltage is also a function of the spatial distribution of positive ions in the insulator layer. Using the values of the built-in voltage, interface photoelectric threshold, the energy band diagram of the MOS structure is constructed. The feasibility of using the extension of long wavelength response of photodetectors using Franz-Keldysh effect was also studied. It was concluded that the shift is too small to be of any practical value. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, INTERFACES), (*SEMICONDUCTOR DEVICES, STABILITY), (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), PHOTOELECTRIC EFFECT, SURFACE PROPERTIES, TRANSISTORS, SILICON DIOXIDE, SILICON

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE