Accession Number : AD0697569

Title :   METHODS OF SiC SURFACE AND p-n JUNCTION TREATMENT,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Afanaseva,G. M. ; Ryzhikov,I. V. ; Kmita,T. G. ; Pavlichenko,V. I.

Report Date : 19 MAY 1969

Pagination or Media Count : 10

Abstract : Etchants for alpha SiC crystals and rectifying junctions were examined. The optimum dissolution rate and the best surface quality were obtained with 4KNO3 plus 1KOH; 2KNO3 plus 1K2 SO4 plus 1KOH; 1KNO3 plus 1NA2 CO3 plus 1KOH. Etching was conducted in a nickel crucibel in air at a temperature of 700-750 degrees C. The quality of the etched surface was checked on an electron diffraction camera by reflective photography. Etching gave optimum results in the melted mixture 5NA2 O2 plus 7NaCl plus 5KOH. (Author)

Descriptors :   (*SEMICONDUCTORS, SURFACE PROPERTIES), (*SILICON CARBIDES, ETCHING), ELECTRON DIFFRACTION, ETCHED CRYSTALS, INTERFACES, USSR

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE