Accession Number : AD0697827

Title :   INVESTIGATION OF SURFACE DEFECTS IN SEMICONDUCTORS.

Descriptive Note : Final rept. 1 Mar 68-16 Jun 69,

Corporate Author : BENDIX CORP SOUTHFIELD MICH BENDIX RESEARCH LABS

Personal Author(s) : Rupprecht,Georg ; Azarbayejani,Gholam-Hossein

Report Date : NOV 1969

Pagination or Media Count : 53

Abstract : The surface states of p- and n-channel insulated gate field effect transistor (IGFET) devices have been studied by monitoring the temperature dependence of the relaxation times of the gate-to-substrate capacitance transients. Surface states in the Si-Si02 interface of these devices, found by this technique, are characterized by discrete energy levels in the forbidden band and cross sections ranging from 10 to the -14th power to 10 to the -19th power/sq.cm. Some of these states are tentatively assigned to vacancies V associated with interstitial oxygen (v + Oi), substitutional boron (V + Bs), or a neighboring vacancy (V + V), whereas others are associated with defects still not completely identified. Agreement with energy-band theories of thermally oxidized silicon is found for some of these states. Lack of agreement for others is attributed to the influence of source and drain sections and background continuous surface states. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, NONDESTRUCTIVE TESTING), (*SEMICONDUCTORS, SURFACE PROPERTIES), RELIABILITY(ELECTRONICS), BAND THEORY OF SOLIDS, CRYSTAL DEFECTS, SILICON DIOXIDE, SILICON, CAPACITANCE, INTERFACES, TRANSIENTS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE