Accession Number : AD0697830

Title :   A STUDY OF THE DEPLETION REGION CARRIER GENERATION RATE DUE TO GOLD IMPURITIES IN SILICON UNDER ANISOTROPIC STRESS.

Descriptive Note : Interim rept. no. 2, 1 Aug 68-1 Aug 69,

Corporate Author : RESEARCH TRIANGLE INST DURHAM N C

Personal Author(s) : Prince,J. L. ; Wortman,J. J.

Report Date : NOV 1969

Pagination or Media Count : 103

Abstract : The thermal generation rate of charge carriers in a depletion region in gold-doped silicon was measured as a function of strain applied in the (100) direction over a range of temperatures. Thermal generation rate was also measured as a function of (100) strain at a single temperature. The technique used is relatively new and is based on the relaxation to equilibrium of a deeply depleted Metal-Oxide-Semiconductor capacitor. The generation rate was observed to increase nearly 100 percent from zero applied strain to an applied strain of 0.005, at 20 degrees C. Experimental results were explained using a model based on Shockley-Read statistics and results from deformation-potential theory. A good fit of theory to experimental results was obtained under the condition that the center of gravity of the two levels shifts upward with the hydrostatic coefficient of Nathan and Paul (1962). The electron capture coefficients characterizing the gold acceptor level were found to decrease with strain. (Author)

Descriptors :   (*SILICON, STRESSES), (*CARRIERS(SEMICONDUCTORS), SOURCES), BAND THEORY OF SOLIDS, STRAIN(MECHANICS), CAPACITORS, ANISOTROPY, IMPURITIES, GOLD, THESES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE