Accession Number : AD0698382

Title :   IONIC MOBILITY IN THE INSULATOR LAYER OF THIN FILM TRANSISTORS,

Corporate Author : SASKATCHEWAN UNIV SASKATOON DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Bradley,J.

Report Date : 14 JUN 1968

Pagination or Media Count : 3

Abstract : The mobility of the instability inducing ions in the SiO-SiO2 layer of vacuum deposited FETs has been estimated to be about 0.000001 cm sq/V sec. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, STABILITY), (*IONS, MOBILITY), SILICON COMPOUNDS, SILICON DIOXIDE, MONOXIDES, VAPOR PLATING, VACUUM APPARATUS, CANADA

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE