Accession Number : AD0698395

Title :   ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON,

Corporate Author : BRITISH COLUMBIA UNIV VANCOUVER DEPT OF PHYSICS

Personal Author(s) : White,J. J.

Report Date : 13 APR 1967

Pagination or Media Count : 8

Abstract : In boron-doped silicon, the excitation of bound holes from the acceptor ground state to the excited states leads to an infrared absorption-line spectrum. In a recent half-width study of the boron absorption lines, Colbow (1963) separated the various line-broadening contributions for the first time. Part of Colbow's half-widths is now found to be due to external strains introduced by the sample mounting. New half-width measurements of 'strain-free' mounted boron-doped silicon are presented, Colbow's work is corrected, and additional information regarding the various broadening contributions is given. (Author)

Descriptors :   (*SEMICONDUCTORS, BAND THEORY OF SOLIDS), (*SILICON, INFRARED SPECTRA), LINE SPECTRA, ABSORPTION SPECTRA, CARRIERS(SEMICONDUCTORS), EXCITATION, PHONONS, DOPING, BORON, CRYOGENICS, CANADA

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE