Accession Number : AD0699949

Title :   INDIUM ARSENIDE-PHOSPHIDE INJECTION LASERS.

Descriptive Note : Semi-Annual technical summary rept. no. 3 Jun-Nov 69,

Corporate Author : BELL AND HOWELL RESEARCH LABS PASADENA CALIF

Personal Author(s) : Thompson,Alan G. ; Ross,Bernd

Report Date : DEC 1969

Pagination or Media Count : 33

Abstract : The indium-arsenide-phosphide system was studied further. Several highly doped InP ingots were prepared and evaluated. Revised power and efficiency figures for the InAs(1-x)Px diode lasers prepared previously are given. The interaction of 1.06 micron light from one of these InAs(1-x)Px diodes with a neodymium-doped glass fiber was studied. A light amplitude amplification of 47 dB or approximately 50,000 was obtained, showing the feasibility of obtaining modulated 1.06 micron light in this manner. (Author)

Descriptors :   (*LASERS, *INDIUM COMPOUNDS), (*SEMICONDUCTOR DEVICES, LASERS), ARSENIC ALLOYS, PHOSPHIDES, SOLID SOLUTIONS, SEMICONDUCTORS, CRYSTAL GROWTH, INFRARED RADIATION, SEMICONDUCTOR DIODES

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE