Accession Number : AD0700077

Title :   A CENTER OF COMPETENCE IN SOLID STATE MATERIALS AND DEVICES,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Lindholm,Fred A. ; Brodersen,Arthur J. ; Chenette,Eugene R. ; Director,Stephen W. ; Gould,Robert W.

Report Date : 10 OCT 1969

Pagination or Media Count : 230

Abstract : A complete characterization of low-frequency noise present in bipolar transistors is given, including the characterization of anomalous burst noise. Measurement of the PME, PC, and Hall effects made between 7 degrees K and 30 degrees K on arsenic-doped and phosphorus-doped silicon yields the ambipolar diffusion length and diffusivity, the carrier mobility, the high-injection lifetime, and the electron capture cross section. Models derived for integrated-circuit diodes and transistors enable the application of common network analysis programs to large-signal bipolar integrated circuits. Mathematical optimization techniques are employed in the design of a wideband integrated-circuit amplifier. A comprehensive study is made of the relationship borne in semiconducting oxide glasses containing transition metal ions between ac and dc conductivity and loss angle, on the one hand, and thermal history, composition and radiation sensitivity, on the other. For potassium-vanadium-phosphate glasses, localization-induced polaron and small-polaron models are shown to predict the observed ac and dc conductivity. A polarization model is proposed for the electrode polarization occurring in alkali-silicate glasses. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, DESIGN), (*SEMICONDUCTOR DEVICES, ELECTRICAL PROPERTIES), (*SEMICONDUCTORS, ELECTRICAL PROPERTIES), (*GLASS, ELECTRICAL PROPERTIES), PHOTOCONDUCTIVITY, HALL EFFECT, NOISE(RADIO), DAMAGE, RADIATION EFFECTS, NEUTRON REACTIONS, TRANSIENTS, CRYOGENICS, SILICON, AMPLIFIERS, FIELD EFFECT TRANSISTORS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE