Accession Number : AD0700134

Title :   PREPARATION OF BULK GALLIUM ARSENIDE MATERIAL.

Descriptive Note : Technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s) : Klohn,Kenneth L. ; Wandinger,Lothar

Report Date : NOV 1969

Pagination or Media Count : 27

Abstract : A review is made of recent progress and advances in the state-of-the-art in the bulk growth of gallium arsenide using the Czochralski, floating zone, Bridgman, and gradient freeze techniques and modifications. Facts which influence crystal growth such as growth rate, shape of liquid-solid interface, particle nucleation, vibration and temperature control are discussed in relation to the design of a crystal growing apparatus. The advantages and disadvantages of each of the above techniques are noted and the most recent results in terms of mobilities and/or dislocation densities achieved in gallium arsenide are indicated. (Author)

Descriptors :   (*GALLIUM ARSENIDES, *CRYSTAL GROWTH), DENDRITIC STRUCTURE, DISLOCATIONS, IMPURITIES, SEMICONDUCTORS

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE