Accession Number : AD0700372

Title :   PREPARATION OF Cu2S FILM SINGLE CRYSTALS,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Aliyarova,Z. A. ; Zamanova,E. N.

Report Date : 18 SEP 1969

Pagination or Media Count : 6

Abstract : The compound Cu2S was synthesized by melting components in a stoichiometric ratio. Electronographic and X-ray diffraction analysis show that the obtained compound is a low-temperature modification of Cu2S with a rhombic lattice. The compound has p-type conductivity. The concentration of free carriers comprises 8.5 x 10 to the -19th cu cm, the resistivity is 0.07 ohm.cm, and the thermal emf is 86 micron V/deg. Polycrystal and single-crystal films 250 A thick were obtained from this substance by the epitaxial method. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, COPPER COMPOUNDS), (*COPPER COMPOUNDS, *EPITAXIAL GROWTH), CRYSTAL STRUCTURE, SULFIDES, FILMS, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE