Accession Number : AD0700807

Title :   ACADEMY OF SCIENCES OF THE USSR, INSTITUTE OF CRYSTALLOGRAPHY, GROWTH OF CRYSTALS (SELECTED ARTICLES),

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Kulish,U. M. ; Chistyakov,Yu. D. ; Maslov,V. N. ; Bonev,I. ; Nenov,D.

Report Date : 06 NOV 1969

Pagination or Media Count : 76

Abstract : Contents: The effect of anisotropy of properties of semiconductor crystals on segregation of impurities in a growing crystal; Mechanism of the oriented growth of crystalline substances (epitaxy); Deviation from Homogeneity in single crystals of gallium phosphide-gallium arsenide solid solutions grown by the epitaxial method; Some instances of change in the habit of crystals during epitaxial growth; Kinetics of the spontaneous transformation of the surface of a crystal-vapor system; and Growth and dislocation models of crystals.

Descriptors :   (*SEMICONDUCTORS, *EPITAXIAL GROWTH), SOLID SOLUTIONS, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, PHOSPHIDES, SINGLE CRYSTALS, PHASE STUDIES, IMPURITIES, DISLOCATIONS, ANISOTROPY, MINERALS, SULFIDES, REPORTS, USSR

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE