Accession Number : AD0701010

Title :   EFFECT OF GROWTH RATE ON THE STRUCTURE AND STACKING DISORDER OF SiC CRYSTAL GROWN BY THE LELY METHOD,

Corporate Author : EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY

Personal Author(s) : Inomata,Yoshizo ; Komatsu,Hiroshi ; Inoue,Zenzaburo ; Mitomo,Mamoru

Report Date : NOV 1969

Pagination or Media Count : 26

Abstract : The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator. (Author)

Descriptors :   (*SILICON CARBIDES, CRYSTAL STRUCTURE), (*CRYSTAL STRUCTURE, *CRYSTAL GROWTH), CRYSTALLIZATION, HIGH TEMPERATURE, DISLOCATIONS, JAPAN

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE