Accession Number : AD0701062
Title : P-MOS ARRAY OF OPTICALLY CONTROLLED DIGITAL CIRCUITS.
Descriptive Note : Scientific rept. no. 1, 1 Nov 68-31 Oct 69,
Corporate Author : RCA LABS PRINCETON N J
Personal Author(s) : Kosonocky,Walter F.
Report Date : DEC 1969
Pagination or Media Count : 49
Abstract : A p-MOS array was developed which included four photosensor-amplifier circuits (each having a different size photodiode), an optically controlled flip-flop, and an optically loadable memory cell. The photodiodes in the p-MOS arrays had a quantum efficiency of about unity for visible and near-infrared illumination, and a dark current density of less than 20 nA/sq cm. The minimum optical energy necessary for a reliable detection by the proposed p-MOS photosensors can be expressed in terms of the photocurrent charge as 2 x 10 to the -14th power coulombs per square mil of the photodiode area. For an optical signal with a wavelength of about 6000 A this corresponds to a flux energy of about 10 nJ/sq cm incident on the photodiodes. These results demonstrate that arrays of optically controlled p-MOS digital circuits having predictable operating characteristics can be fabricated by a standard p-MOS process. These tests also showed that excellent quality photodiodes can be made without any additional steps in the p-MOS process, and that the yield of the p-MOS arrays is not affected by the presence of the photodiodes. (Author)
Descriptors : (*DATA STORAGE SYSTEMS, FEASIBILITY STUDIES), (*LOGIC CIRCUITS, PHOTODIODES), (*PHOTODIODES, *INTEGRATED CIRCUITS), (*FIELD EFFECT TRANSISTORS, INTEGRATED CIRCUITS), MANUFACTURING, MEMORY DEVICES, SILICON, DIGITAL SYSTEMS, PATTERN RECOGNITION
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE