Accession Number : AD0701410

Title :   THERMODYNAMICS OF THE FIELD-EFFECT.

Descriptive Note : Final rept.,

Corporate Author : PITTSBURGH UNIV PA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Kunig,Horst

Report Date : JAN 1970

Pagination or Media Count : 119

Abstract : A new thermodynamic field-effect transistor theory is developed. The ultra-high frequency performance, power gain and switching speed of insulated gate as well as pn-junction field-effect transistors are derived under thermal constraints. Several practical device configurations are treated and their maximum frequency performance analyzed. Furthermore instabilities are related to the temperature distribution change with time in the device channel. A semiexperimental technique to quickly determine the maximum frequency performance of any device configuration is demonstrated. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, THERMODYNAMICS), RADIOFREQUENCY POWER, THERMAL STABILITY, MICROWAVE FREQUENCY, GALLIUM ARSENIDES, INDIUM COMPOUNDS, ARSENIDES, SILICON

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE