Accession Number : AD0701973

Title :   TUNNELING SPECTROSCOPY IN DEGENERATE p-TYPE SILICON,

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Cullen,D. E. ; Wolf,E. L. ; Compton,W. Dale

Report Date : FEB 1970

Pagination or Media Count : 50

Abstract : Tunneling in boron doped p-type silicon metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) tunnel junctions has been studied at low temperatures by measuring the derivatives, dI/dV and the second derivative of I with respect to V, of the current-voltage characteristics as functions of applied bias voltage V. Junctions were prepared by evaporating metal contacts onto vacuum or air cleaved silicon surfaces. The general features of the tunneling conductance were found to be in qualitative agreement with existing theories of tunneling in semiconductors. Structure in the derivative data resulting from the interaction of tunneling electrons with silicon zone center phonons and boron local mode phonons has been observed. The optical phonon lineshapes in the most heavily doped MIS units are shown to compare well with the theoretical lineshapes in which modifications in the bulk semiconductor states arising from electron-optical phonon interactions in the semiconductor electrode have been included. The origin of the optical phonon and local mode phonon structure in samples of lower doping is not fully understood. (Author)

Descriptors :   (*SEMICONDUCTORS, *TUNNELING(ELECTRONICS)), SILICON DIOXIDE, SILICON, INDIUM, LEAD(METAL), PHONONS, CRYOGENICS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE