Accession Number : AD0702778

Title :   SELECTIVE DOPING FOR PIEZOELECTRIC CRYSTALS BY ION IMPLANTATION.

Descriptive Note : Technical rept. no. 2, 1 Jul-31 Dec 69,

Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s) : Shifrin,G. A. ; Jamba,D. M. ; Jones,W. R. ; Marsh,O. J. ; Wauk,M. T.

Report Date : 31 DEC 1969

Pagination or Media Count : 19

Abstract : The feasibility of creating n-type conducting regions in piezoelectric crystals by ion implantation is being investigated. Experimental studies have been performed with crystals of CdS, ZnO, and GaAs and dopant ions of H, B, F, Al, Cl, and Ga. To date, ZnO, CdS, and GaAs have been doped by ion implantation. The ZnO work is being extended to include high resistivity Li-doped material. Semi-insulating GaAs was doped p-type by Cd(+) implantation; S(+) implantation will be used to produce the desired n-type conduction. Acoustic wave propagation and transducer interaction calculations are reported for both ZnO and GaAs. Preliminary calculations for the monolithic amplifier concept in GaAs are reported. A computer program has been developed which calculates the attenuation in the amplification for parallel acoustic propagation and applied electric field. Preliminary results for acoustic monolithic amplifier operation characteristics are reported for both ZnO and GaAs; large gains result for ZnO. (Author)

Descriptors :   (*PIEZOELECTRIC CRYSTALS, ION BOMBARDMENT), (*SEMICONDUCTORS, DOPING), CADMIUM SULFIDES, GALLIUM ARSENIDES, ZINC COMPOUNDS, OXIDES, PIEZOELECTRIC TRANSDUCERS, ULTRASONIC RADIATION

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE