Accession Number : AD0702833

Title :   METHODS OF MEASUREMENT FOR SEMICONDUCTOR MATERIALS, PROCESS CONTROL, AND DEVICES.

Descriptive Note : Quarterly rept. 1 Jul-30 Sep 69,

Corporate Author : NATIONAL BUREAU OF STANDARDS WASHINGTON D C ELECTRONIC TECHNOLOGY DIV

Personal Author(s) : Bullis,W. Murray

Report Date : MAR 1970

Pagination or Media Count : 73

Abstract : The report describes activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Principal emphasis is placed on measurement of resistivity, carrier lifetime, and electrical inhomogeneities in semiconductor crystals; evaluation of wire bonds; and measurement of thermal properties of semiconductor devices. Other tasks involve study of infrared measurement methods, deep-lying impurities in InSb, and gold in silicon; establishment of a processing facility; evaluation of aluminum metallization and wafer die attachment; review of NASA measurement methods; and measurement of Hall effect in semiconductor crystals, second breakdown in transistors, and properties of microwave devices. Related projects on silicon nuclear radiation detectors and specification of germanium are also described. (Author)

Descriptors :   (*SEMICONDUCTORS, ELECTRICAL PROPERTIES), (*SEMICONDUCTOR DEVICES, QUALITY CONTROL), ELECTRICAL RESISTANCE, BONDING, ELECTRIC TERMINALS, THERMAL PROPERTIES, EPITAXIAL GROWTH, MICROWAVE EQUIPMENT, GAMMA COUNTERS, INDIUM ANTIMONIDES, SILICON, GERMANIUM

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy
      Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE