Accession Number : AD0702897

Title :   INJECTION ELECTROLUMINESCENCE IN II-VI SEMICONDUCTING COMPOUNDS.

Descriptive Note : Final rept. 1 Oct 68 - 30 Sep 69,

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y RESEARCH AND DEVELOPMENT CENTER

Personal Author(s) : Aven,Manuel ; Marple,Dudley T. F. ; Woodbury,H. Hugh

Report Date : MAR 1970

Pagination or Media Count : 101

Abstract : Single crystals of Cd(1-x)Mg(x)Te have been grown by a vertical zone-refining technique using material synthesized from Mg and CdTe. The crystals can be made n-type conducting with x up to 0.35. Aluminum and I introduce hydrogenic-type donor levels while In, Cl, and Br create deeper levels. Faraday effect measurements have shown that the band structure of Cd(1-x)Mg(x)Te is similar to that of other II-VI compounds, and that the electron effective mass is 0.17. The diffusivity and the activation energy for diffusion of Al in ZnSe, ZnSe(0.5)Te(0.5) and ZnTe have been determined in the temperature range of 700 degrees to 1000 degrees C. Luminescence efficiency measurements on ZnSe(x)Te(1-x) under cathode ray excitation have shown that in undoped and P-doped crystals the efficiency drops from about 2% at 77 degrees K to about 0.002% at 300 degrees K, while Al-doped crystals maintain an approximately 1% efficiency throughout this temperature range. Junction profile studies and spectral distribution measurements suggest that most of the radiative recombinations occur in a transition region between the n-type bulk of the diodes. A study of liquid epitaxial growth of ZnSe(x)Te(1-x) diodes has been initiated. (Author)

Descriptors :   (*SEMICONDUCTORS, *ELECTROLUMINESCENCE), (*SINGLE CRYSTALS, CRYSTAL GROWTH), SEMICONDUCTOR DIODES, EPITAXIAL GROWTH, MAGNETOOPTICS, BAND THEORY OF SOLIDS, SYNTHESIS(CHEMISTRY), MAGNESIUM COMPOUNDS, SOLID SOLUTIONS, CADMIUM COMPOUNDS, ZINC COMPOUNDS, SELENIDES, TELLURIDES, DOPING

Subject Categories : Crystallography
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE