Accession Number : AD0704895
Title : CRYSTAL PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS.
Descriptive Note : Rept. for Jan 68-Dec 69,
Corporate Author : INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y EAST FISHKILL LAB
Personal Author(s) : Schwuttke,Guenter H.
Report Date : 02 MAR 1970
Pagination or Media Count : 129
Abstract : The report consists of two parts. Part 1 reviews material problems related to semiconductor device technology. It is shown that certain crystal defects can be more important in determining device yield, device performance, and device reliability than the material parameters normally specified. Process-induced defects, their influence on device yield, and their elimination through changes in process technology are also discussed. Part 2 discusses a new approach to x-ray topography, based on automated Bragg angle control (ABAC). ABAC maintains the operation of the topographic system at all times at the maximum x-ray intensity for exposing the photographic plate. Using numerical Fourier techniques, a control scheme is developed that maintains the x-ray system at all times at the peak of the rocking curve I(beta). The mathematical control scheme is implemented through an angular derivative generator capable of generating the signal dI/d(beta) on a continuous basis. Complete design details of a feedback control unit are given. Internal adjustment, calibration procedures, and detailed directions for the use of the system are also provided. (Author)
Descriptors : (*INTEGRATED CIRCUITS, MANUFACTURING), (*SEMICONDUCTOR DEVICES, RELIABILITY(ELECTRONICS)), (*SEMICONDUCTORS, *CRYSTAL DEFECTS), X RAY DIFFRACTION, SINGLE CRYSTALS, SILICON, QUALITY CONTROL
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE