Accession Number : AD0706100

Title :   ROOM TEMPERATURE INJECTION LUMINESCENCE IN II-VI SEMICONDUCTORS.

Descriptive Note : Final rept. 1 Nov 68-31 Oct 69,

Corporate Author : BOWMAR CANADA LTD OTTAWA (ONTARIO) OPTOELECTRONICS DIV

Personal Author(s) : Kennedy,David I. ; Russ,Malcolm J.

Report Date : APR 1970

Pagination or Media Count : 138

Abstract : The experimental program described in this report has primarily been concerned with ivestigations of room temperature injection luminescence in ZnTe. Congruent preliminary investigations have involved the growth of ZnTe crystals with particular emphasis on the incorporation of efficient recombination centers associated with the isoelectronic oxygen center, and investigation of the photoluminescent properties of as-grown crystals and crystals subjected to post-growth annealing. (Author)

Descriptors :   (*SEMICONDUCTORS, *ELECTROLUMINESCENCE), (*ZINC COMPOUNDS, *CRYSTAL GROWTH), VAPOR PLATING, EPITAXIAL GROWTH, BAND THEORY OF SOLIDS, SEMICONDUCTING FILMS, ANNEALING, SELENIDES, TELLURIDES, CANADA

Subject Categories : Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE