Accession Number : AD0706308

Title :   LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb(0.8)Sn(0.2)Te,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE CENTER FOR MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Walpole,James N. ; Nill,Kenneth W. ; Calawa,Arthur R. ; Harman,Theodore C.

Report Date : APR 1970

Pagination or Media Count : 17

Abstract : Laser emission is obtained from forward biased evaporated metal barriers on degenerate p-PbTe and p-Pb(0.8)Sn(0.2)Te at T = 4.2 degrees K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n-type surface region on p-type samples without chemical doping. Low threshold laser emission has been obtained from these barriers on p-PbTe at a wavelength of 6.4 micrometers and from Pb barriers on p-Pb(0.8)Sn(0.2)Te at a wavelength of 15 micrometers. (Author)

Descriptors :   (*INFRARED LASERS, SEMICONDUCTOR DIODES), (*INFRARED RADIATION, SOURCES), LASERS, LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, CRYOGENICS, WORK FUNCTIONS

Subject Categories : Lasers and Masers
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE