Accession Number : AD0707727

Title :   A COMPUTER STUDY OF CHANNELING IN SILICON.

Descriptive Note : Master's thesis,

Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF

Personal Author(s) : Finno,Roy Stephen

Report Date : JUN 1969

Pagination or Media Count : 79

Abstract : A computer simulation study is reported of channeling in a diamond lattice. The simulation was done for a Xenon ion striking the (100), (110) or (111) surface of a silicon target. Potential functions for the Si-Si lattice bond and the Xe-Si interaction are postulated. The electronic stopping cross section for the <110> channel of silicon is estimated. The work is a continuation in the development of a computer model which takes into consideration the displacement of the atoms in the target lattice as well as inelastic energy losses by the primary ion. The lattice was not thermalized and only the repulsive portion of the lattice-lattice potential was used. Computer ranges are in good agreement with experimental date. (Author)

Descriptors :   (*SEMICONDUCTORS, DOPING), (*SILICON, *ION BOMBARDMENT), (*XENON, TRANSPORT PROPERTIES), POTENTIAL THEORY, SUBROUTINES, SIMULATION, THESES

Subject Categories : Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE