Accession Number : AD0707772

Title :   STRUCTURAL MODEL FOR AMORPHOUS SILICON AND GERMANIUM.

Descriptive Note : Technical rept.,

Corporate Author : HARVARD UNIV CAMBRIDGE MASS DIV OF ENGINEERING AND APPLIED PHYSICS

Personal Author(s) : Polk,D. E.

Report Date : MAY 1970

Pagination or Media Count : 24

Abstract : A model for amorphous germanium and silicon has been constructed using the random network concept. Each atom has a first coordination number of four, and only a small variation in the nearest neighbor distance is allowed. Non-crystallinity is due to variations in the tetrahedral bond angle and rotations about bonds. No difficulty was encountered in continuing to make the model larger and no difference between the central and outer regions could be observed. The radial distribution function and the density of the model agree well with recent measurements. (Author)

Descriptors :   (*SEMICONDUCTING FILMS, ELECTRICAL PROPERTIES), (*SOLID SOLUTIONS, CRYSTAL STRUCTURE), SILICON, GERMANIUM, CHEMICAL BONDS, X RAY DIFFRACTION

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE