Accession Number : AD0708899

Title :   PHYSICAL BEHAVIOR OF HIGH FIELD DEVICES.

Descriptive Note : Final rept. 28 Apr 67-27 Apr 70,

Corporate Author : RENSSELAER POLYTECHNIC INST TROY N Y

Personal Author(s) : Ghandhi,Sorab K.

Report Date : 27 APR 1970

Pagination or Media Count : 7

Abstract : Research was aimed at developing a theory of operation for the junction gate, field effect transistor (FET) in the pinched mode, i.e., in its saturated region. All existing theories for this device deal with the region prior to pinch off; interestingly, nearly all FET applications require operation beyond pinch off. Thus, the need for a more complete theory was self-evident. Final programs were studying the physical behavior of high field devices. Specifically, research was conducted in the study of the photo-response of NnuN structures under high field conditions. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, MATHEMATICAL MODELS), PHOTOSENSITIVITY, ELECTRIC FIELDS, DOPING

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE