Accession Number : AD0708936

Title :   RESEARCH STUDY ON DESIGN OF HIGH TRANSCONDUCTANCE FIELD-EFFECT TRANSISTOR.

Descriptive Note : Final rept.

Corporate Author : SPRAGUE ELECTRIC CO NORTH ADAMS MASS

Report Date : 23 MAY 1964

Pagination or Media Count : 44

Abstract : The program was undertaken to devise means of fabricating a field effect transistor having a high transconductance and a low capacitance. It was originally planned to build this device by growing a P-type layer on an N-type substrate. However, it was found that this could not be done with any repeatability, and therefore P-type substrates were substituted for the N-type. During the program, a method for masking and etching silicon slices to form mesas was developed, and conditions for realizing mesas of uniform height over an entire slice or from slice to slice were found. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, MANUFACTURING), ELECTRICAL CONDUCTIVITY, CAPACITANCE, SINGLE CRYSTALS, EPITAXIAL GROWTH, SUBSTRATES, SILICON, MASKING, ETCHING

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE