Accession Number : AD0709257

Title :   GROWTH, PROCESSING, AND CHARACTERIZATION OF beta-SILICON CARBIDE SINGLE CRYSTALS.

Descriptive Note : Final rept. 9 Feb 67-22 May 70,

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : Rosengreen,Arne

Report Date : MAY 1970

Pagination or Media Count : 42

Abstract : Equipment and growth procedures for growing beta-silicon carbide epitaxially on beta-silicon carbide substrates from methyltrichlorosilane in a carrier gas of hydrogen is described. Hall and resistivity measurements and electron spin resonance measurements are discussed. The results show that the quality of the epitaxially grown material is comparable with that of the best solution grown crystals. Processing steps such as oxidation, masking, and etching have been performed and simple electroluminescent diodes have been fabricated. (Author)

Descriptors :   (*SILICON CARBIDES, *CRYSTAL GROWTH), (*SEMICONDUCTORS, *MANUFACTURING), EPITAXIAL GROWTH, SINGLE CRYSTALS, DOPING, IMPURITIES, HALL EFFECT, ELECTRON PARAMAGNETIC RESONANCE

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE