Accession Number : AD0711750

Title :   INFLUENCE OF DEFECTS INDUCED BY LOW-ENERGY PROTONS ON DIFFUSION LENGTH OF MINORITY CARRIERS IN p-TYPE SILICON,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s) : Grigoreva,G. M. ; Kreinin,L. B. ; Landsman,A. P.

Report Date : 22 JUL 1970

Pagination or Media Count : 9

Abstract : The authors describe the results of investigations into the effect of irradiation by protons with energies E equals 1-6 MeV on electron diffusion length in p-type silicons. Two types of silicon were investigated: silicon obtained by melt extrusion and doped with boron at a given concentration, and noncrucible, vacuum-grown silicon doped with aluminum in a given concentration. Analysis of the spectral characteristics of n-p-structures revealed variations in the diffusion length of minority current carriers in p-type silicon due to defects induced by proton bombardment. The anomalous results for electron diffusion length after irradiation by 1 and 2 MeV protons is attributed to the diffusion length measurement method. Discrepancy between experimental and theoretical curves for electron diffusion length changes following irradiation by protons with energies E equals 4-6 MeV is attributed to defect annealing. (Author)

Descriptors :   (*SEMICONDUCTORS, *DAMAGE), (*SILICON, PROTON BOMBARDMENT), (*CARRIERS(SEMICONDUCTORS), DIFFUSION), ELECTRONS, CRYSTAL DEFECTS, DOPING, USSR, (U)USSR

Subject Categories : Radioactiv, Radioactive Wastes & Fission Prod
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE