Accession Number : AD0711797

Title :   FERMI SURFACE STUDIES IN SnTe.

Descriptive Note : Final rept.,

Corporate Author : NAVAL ORDNANCE LAB WHITE OAK MD

Personal Author(s) : Savage,Howard T. ; Houston,Bland

Report Date : 01 JUL 1970

Pagination or Media Count : 117

Abstract : The de Haas-van Alphen effect (DHVA) at temperatures from 1.6K to 7.9K was used to investigate the Fermi surface of SnTe. DHVA data in SnTe separated into two regions, a normal region above a carrier concentration of 3 x 10 to the 20th power/cc and an anomalous region below. Above a carrier concentration of 3 x 10 to the 20th power/cc, oscillations of a second band were observed, in addition to the first band oscillations. The second-band pockets are probably non-parabolic and have a shape greatly elongated in a <100> direction. A <111> cyclotron mass and Dingle temperature were measured in the first band and a <100> cyclotron mass and Dingle temperature in the second. In addition, a density of states was determined. Below a carrier concentration of 3 x 10 to the 20th power/cc several branches were found describing the first-band pockets at L which are elongated in a <111> direction. Our observed minimum extremal cross section of the first band surface is more in agreement with the surface calculated by Rabii than with that calculated by Tung and Cohen. (Author)

Descriptors :   (*SEMICONDUCTORS, TELLURIDES), (*TELLURIDES, SURFACE PROPERTIES), TIN COMPOUNDS, CRYOGENICS, CARRIERS(SEMICONDUCTORS), BAND THEORY OF SOLIDS, HARMONIC ANALYSIS, FOURIER ANALYSIS

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE