Accession Number : AD0712004

Title :   CONDUCTION MECHANISMS IN HIGH QUALITY GALLIUM ARSENIDE.

Descriptive Note : Master's thesis,

Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s) : Scheerer,John F.

Report Date : JUN 1970

Pagination or Media Count : 70

Abstract : The purpose of the project was to investigate the conduction mechanisms in high quality GaAs by precisely measuring the resistivity and Hall constant and from this calculate the mobility. These results were then compared to theory. Equipment for this purpose was designed and built. A bulk GaAs specimen was investigated. The results showed that a combination of polar-optical and ionized impurity scattering were the predominate mechanisms from room temperature to 66K, and that ionized impurity scattering was predominate from 66K to 20K. From 20K to 4.2K no determination of scattering mechanisms could be made because the assumption that the value of the scattering factor was one, was not valid in this range. (Author)

Descriptors :   (*SEMICONDUCTORS, CONDUCTIVITY), (*GALLIUM ARSENIDES, CONDUCTIVITY), ELECTRICAL RESISTANCE, HALL EFFECT, SCATTERING, THESES

Subject Categories : Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE